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Cissoid Transistors & Diodes

CISSOID at NAC Semi · Power management

Transistors & Diodes

Explore high-temperature transistors, diodes and power modules. Compare device types, temperature ranges and voltage ratings, then open a product page for detailed specifications and ordering information.

23 product familiesMOSFETs & IGBTsSilicon & SiC diodes
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Compare Product Families

Ratings summarize the product families. Current capability and voltage limits depend on the selected variant and operating conditions; consult the product datasheet before selection.

23 transistor and diode families
CXT-PLA3SA12450SiC MOSFET−40°C to +175°C1200 V
CMT-PLA9869SiC MOSFET−55°C to +175°CUp to 1200 V
CMT-PLA2218IGBT module−55°C to +175°CUp to 1200 V
CMT-PLA8963IGBT module−55°C to +175°CUp to 1200 V
NEPTUNE-1210SiC MOSFET−55°C to +225°CUp to 1200 V
PLUTO-B1230SiC MOSFET−55°C to +210°CUp to 1200 V
PLUTO-B1220SiC MOSFET−55°C to +210°CUp to 1200 V
PLUTO-C1230SiC MOSFET−55°C to +210°CUp to 1200 V
IO-1210SiC diode−55°C to +210°C1200 V
IO-1202SiC diode−55°C to +210°C1200 V
EUROPA-A1230SiC diode−55°C to +210°CIn excess of 1200 V per diode
EUROPA-A1220SiC diode−55°C to +210°CIn excess of 1200 V per diode
SATURNN-channel MOSFET−55°C to +225°CUp to 40 V
EARTHN-channel MOSFET−55°C to +225°CUp to 80 V
VENUSP-channel MOSFET−55°C to +225°CUp to 30 V
CHT-NMOS8001N-channel MOSFET−55°C to +225°CUp to 80 V
MOONN-channel MOSFET−55°C to +225°C0 V to +40 V
MARSP-channel MOSFET−55°C to +225°CUp to −30 V
MERCURYN-channel MOSFET−55°C to +225°CUp to 80 V
ELARASilicon diode-55°C to +225°C80V
CALLISTOSilicon diode−55°C to +225°C80 V
GANYMEDESilicon diode−55°C to +225°C80 V
AMALTHEASilicon diode−55°C to +225°C80 V
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Product Families

SiC MOSFET

CXT-PLA3SA12450

  • Power-device junction temperature: −40°C to +175°C
  • Gate-driver ambient temperature: −40°C to +125°C
  • Drain-to-source breakdown voltage: 1200 V
  • On-resistance: 3.25 mΩ typical
  • Maximum continuous current: 450 A at Tf = 25°C; 300 A at Tf = 90°C
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SiC MOSFET

CMT-PLA9869

  • Junction temperature range: −55°C to +175°C
  • Drain voltage: Up to 1200 V
  • Maximum drain current at 25°C: 60 A DC
  • On-resistance (RDS(on)): 40 mΩ at 25°C; 75 mΩ at 175°C
  • Gate-source voltage (VGS): −4 V to +18 V
  • Package: TO-247
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IGBT module

CMT-PLA2218

  • Junction temperature range: −55°C to +175°C
  • Collector voltage: Up to 1200 V
  • Maximum collector current: 300 A DC at TC = 100°C
  • Collector-emitter saturation voltage: 1.85 V at 25°C / 300 A
  • Package: 62 mm half-bridge power package
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IGBT module

CMT-PLA8963

  • Junction temperature range: −55°C to +175°C
  • Collector voltage: Up to 1200 V
  • Maximum collector current: 200 A DC at TC = 100°C
  • Collector-emitter saturation voltage: 1.85 V at 25°C / 200 A
  • Package: 62 mm half-bridge power package
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SiC MOSFET

NEPTUNE-1210

  • Temperature range: −55°C to +225°C
  • Drain voltage: Up to 1200 V
  • Maximum drain current at 225°C: 10 A DC
  • On-resistance (RDS(on)): 40 mΩ at 25°C; 120 mΩ at 225°C
  • Gate-source voltage (VGS): −4 V to +20 V
  • Package: Metal TO-257
  • Case isolation: Pins electrically isolated from the metal case
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SiC MOSFET

PLUTO-B1230

  • Temperature range: −55°C to +210°C
  • Drain voltage: Up to 1200 V
  • Maximum drain current per switch: 25 A DC at TC = 175°C
  • On-resistance per switch: 20 mΩ at 25°C; 60 mΩ at 210°C
  • Gate-source voltage (VGS): −5 V to +20 V
  • Package: Hermetic HM8A module
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SiC MOSFET

PLUTO-B1220

  • Temperature range: −55°C to +210°C
  • Drain voltage: Up to 1200 V
  • Maximum drain current per switch: 17 A DC at TC = 175°C
  • On-resistance per switch: 40 mΩ at 25°C; 120 mΩ at 210°C
  • Gate-source voltage (VGS): −5 V to +20 V
  • Package: Hermetic HM8A module
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SiC MOSFET

PLUTO-C1230

  • Junction temperature range: −55°C to +210°C
  • Drain voltage: Up to 1200 V
  • Maximum continuous MOSFET drain current: 25 A DC at TC = 175°C
  • Typical MOSFET on-resistance: 20 mΩ at TJ = 25°C; 60 mΩ at TJ = 210°C (VGS = 20 V, ID = 25 A)
  • Gate-source voltage (VGS): −5 V to +20 V
  • Typical Schottky diode forward voltage: 1.35 V at 30 A, TJ = 25°C
  • Package: Hermetic HM8A module with isolated case
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SiC diode

IO-1210

  • Junction temperature range: −55°C to +210°C
  • Maximum reverse voltage: 1200 V
  • Typical forward voltage: 1.2 V at 10 A, TJ = 25°C
  • Maximum continuous DC current: 10 A at TC = 175°C
  • Repetitive peak forward surge current: 12 A
  • Package: Hermetically sealed TO-257 metal package; pins electrically isolated from the case
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SiC diode

IO-1202

  • Junction temperature range: −55°C to +210°C
  • Maximum reverse voltage: 1200 V
  • Typical forward voltage: 1.15 V at 2 A, TJ = 25°C
  • Maximum continuous DC current: 2 A per diode at TC = 175°C
  • Repetitive peak forward surge current: 2.5 A per diode
  • Package: Hermetically sealed TO-257 metal package
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SiC diode

EUROPA-A1230

  • Junction temperature range: −55°C to +210°C
  • Breakdown voltage: In excess of 1200 V per diode
  • Typical forward voltage: 1.35 V at 30 A, TJ = 25°C
  • Maximum continuous DC current: >30 A at TC = 175°C
  • Repetitive peak forward surge current: 50 A
  • Package: Hermetic HM8A module with isolated case
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SiC diode

EUROPA-A1220

  • Junction temperature range: −55°C to +210°C
  • Breakdown voltage: In excess of 1200 V per diode
  • Typical forward voltage: 1.5 V at 20 A, TJ = 25°C
  • Maximum continuous DC current: >20 A at TC = 175°C
  • Repetitive peak forward surge current: 35 A
  • Package: Hermetic HM8A module with isolated case
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N-channel MOSFET

SATURN

  • Temperature range: −55°C to +225°C
  • Drain voltage: Up to 40 V
  • Maximum drain current at 225°C: CHT-NMOS4005: 3.9 A; CHT-NMOS4010: 7.6 A; CHT-NMOS4020: 14 A
  • On-resistance at 25°C: CHT-NMOS4005: 0.4 Ω; CHT-NMOS4010: 0.2 Ω; CHT-NMOS4020: 0.12 Ω
  • Gate-source voltage (VGS): −0.5 V to +5.5 V
  • Package options: TO-254 metal package; Known Good Die
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N-channel MOSFET

EARTH

  • Temperature range: −55°C to +225°C
  • Drain voltage: Up to 80 V
  • Maximum drain current at 225°C: CHT-NMOS8005: 5 A; CHT-NMOS8010: 10 A
  • On-resistance at 25°C: CHT-NMOS8005: 0.48 Ω; CHT-NMOS8010: 0.24 Ω
  • Gate-source voltage (VGS): 0 V to +5 V
  • Package options: TO-254 metal package; Potential Good Die
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P-channel MOSFET

VENUS

  • Temperature range: −55°C to +225°C
  • Drain voltage: Up to 30 V
  • Maximum drain current at 225°C: CHT-PMOS3002: 2 A; CHT-PMOS3004: 4 A; CHT-PMOS3008: 8 A
  • On-resistance at 225°C: CHT-PMOS3002: 3.9 Ω; CHT-PMOS3004: 2 Ω; CHT-PMOS3008: 1 Ω
  • Gate-source voltage (VGS): 0 V to −5 V
  • Package options: TO-254 metal package; Known Good Die
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N-channel MOSFET

CHT-NMOS8001

  • Temperature range: −55°C to +225°C
  • Drain voltage: Up to 80 V
  • Maximum DC drain current at 225°C: 1 A
  • Maximum pulsed drain current at 225°C: 3 A
  • On-resistance: 0.76 Ω at 25°C; 1.56 Ω at 225°C
  • Gate-source voltage (VGS): −5 V to +5 V; compatible with 0 V / +5 V control
  • Package options: Hermetically sealed TDFP16 ceramic SMD; Known Good Die
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N-channel MOSFET

MOON

  • Junction temperature range: −55°C to +225°C
  • Drain-source operating voltage: 0 V to +40 V
  • Typical on-resistance per transistor: 0.38 Ω at 25°C; 0.65 Ω at 225°C; VGS = 5 V, VDS = 50 mV
  • Typical pulsed drain current at 225°C: 3.9 A per transistor; VDS = 40 V, VGS = 5 V, 2 µs pulse
  • Absolute maximum DC drain current: 3 A for one NMOS at VGS = 5 V; subject to thermal derating
  • Gate-source operating voltage (VGS): 0 V to +5 V
  • Packaged device: Ceramic SOIC16 (CSOIC16)
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P-channel MOSFET

MARS

  • Temperature range: −55°C to +225°C
  • Drain voltage: Up to −30 V
  • Maximum drain current at 225°C: 310 mA
  • Gate leakage at 225°C: 0.4 µA
  • Gate-source voltage (VGS): 0 V to −5 V
  • Package options: TO-18 metal can; Potential Good Die
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N-channel MOSFET

MERCURY

  • Temperature range: −55°C to +225°C
  • Drain voltage: Up to 80 V
  • Maximum drain current at 225°C: 300 mA
  • Input capacitance: 23 pF
  • Gate-source voltage (VGS): 0 V to +5 V
  • Package options: TO-18 metal can; Known Good Die
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Silicon diode

ELARA

  • Temperature range: -55°C to +225°C
  • Maximum reverse voltage: 80V
  • Max forward current @ 225°C: 450mA
  • Capacitance: 15pF Typ.
  • TDFP16 ceramic package
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Silicon diode

CALLISTO

  • Temperature range: −55°C to +225°C
  • Maximum reverse voltage: 80 V
  • Continuous forward current: 0 to 250 mA (operating conditions)
  • Maximum forward current at 225°C: 280 mA at VF = 1.5 V
  • Forward surge current: 300 mA (absolute maximum)
  • Junction capacitance: 8.5 pF typical at VR = 25 V
  • Reverse leakage at 225°C: 8.9 µA typical at VR = 80 V
  • Package options: TO-18 metal can; Known Good Die
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Silicon diode

GANYMEDE

  • Temperature range: −55°C to +225°C
  • Maximum reverse voltage: 80 V
  • Continuous forward current: 0 to 250 mA (operating conditions)
  • Maximum forward current at 225°C: 280 mA at VF = 1.5 V
  • Forward surge current: 300 mA (absolute maximum)
  • Junction capacitance: 8.5 pF typical at VR = 25 V
  • Reverse leakage at 225°C: 8.9 µA typical at VR = 80 V
  • Package options: TO-18 metal can; Known Good Die
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Silicon diode

AMALTHEA

  • Temperature range: −55°C to +225°C
  • Maximum reverse voltage: 80 V
  • Continuous forward current: 0 to 3 A (operating conditions)
  • Maximum forward current at 225°C: 3 A at VF = 1.85 V
  • Peak repetitive forward current: 4 A (absolute maximum)
  • Junction capacitance: 36 pF typical at VR = 80 V, 25°C, 1 MHz
  • Reverse leakage at 225°C: 40 µA typical at VR = 80 V
  • Package options: TO-257 metal can; Potential Good Die
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