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CISSOID at NAC Semi · High-Temperature Power MOSFETs
CHT-MOON 40 V Dual N-Channel MOSFET
CHT-MOON combines two high-voltage N-channel MOSFETs in a compact CSOIC16 ceramic surface-mount package. It operates from −55°C to +225°C while maintaining low leakage currents.
The device is optimized for low- and medium-power DC-DC converters, including synchronous buck designs using CISSOID’s CHT-MAGMA PWM controller.
Dual N-channel MOSFET
CSOIC16
Compact ceramic
surface-mount package
Typical Performance
Review the key characteristics of the CHT-MOON 40 V dual N-channel MOSFET.
- Junction temperature range
- −55°C to +225°C
- Drain-source operating voltage
- 0 V to +40 V
- Typical on-resistance per transistor
- 0.38 Ω at 25°C; 0.65 Ω at 225°C
VGS = 5 V, VDS = 50 mV - Typical pulsed drain current at 225°C
- 3.9 A per transistor
VDS = 40 V, VGS = 5 V, 2 µs pulse - Absolute maximum DC drain current
- 3 A for one NMOS at VGS = 5 V; subject to thermal derating
- Gate-source operating voltage (VGS)
- 0 V to +5 V
- Packaged device
- Ceramic SOIC16 (CSOIC16)
Refer to the CHT-MOON datasheet (PDF, opens in a new tab) (version 1.4, 2 January 2018) for test conditions, safe operating area and thermal derating. Absolute maximum ratings are stress limits, not guaranteed operating conditions.
Ordering Information
Review the packaged device and the die reference below. Select a part number to search the NAC store.
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CHT-PLA2016A-CSOIC16-T | No image available | CHT-MOON | Ceramic SOIC16 | CHT-PLA2016A | |
| CHT-NMOS40-D-TConfirm die configuration with NAC | No image supplied | CHT-MOON | Known Good Die | Not supplied |
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Die ordering note: The legacy listing references “Note 1” for CHT-NMOS40-D-T, but does not provide its text. The linked MOON datasheet lists only CHT-PLA2016A-CSOIC16-T. Confirm die configuration and suitability with NAC before ordering.
Engineering & distribution support
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