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Cissoid Transistors & Diodes - CHT-NEPTUNE-1210

CISSOID at NAC Semi · Power Transistors

CHT-NEPTUNE-1210 Silicon Carbide MOSFET

CHT-NEPTUNE-1210 is a high-temperature, high-voltage silicon carbide (SiC) MOSFET switch in a metal TO-257 package. Its metal case is electrically isolated from the switch terminals. The device operates from −55°C to +225°C, with a breakdown voltage above 1200 V and switching capability up to 10 A at 225°C.

The device includes a body diode that can be used as a freewheeling diode. Version D (PLA8543D), replacing obsolete version C (PLA8543C), offers lower on-resistance with equivalent switching energies.

−55°C to +225°C1200 V drain voltage10 A DC at 225°CIsolated metal TO-257
CISSOID CHT-NEPTUNE-1210 CHT-NEPTUNE-1210 SiC MOSFET

CHT-NEPTUNE-1210 · SiC MOSFET

Typical Performance

Review the key characteristics of the CHT-NEPTUNE-1210 SiC MOSFET family.

Temperature range
−55°C to +225°C
Drain voltage
Up to 1200 V
Maximum drain current at 225°C
10 A DC
On-resistance (RDS(on))
40 mΩ at 25°C; 120 mΩ at 225°C
Gate-source voltage (VGS)
−4 V to +20 V
Package
Metal TO-257
Case isolation
Pins electrically isolated from the metal case

Refer to the CHT-NEPTUNE-1210 datasheet (PDF, opens in a new tab) for test conditions and operating limits.

Ordering Information

Review the CHT-NEPTUNE-1210 ordering option and open the datasheet for complete specifications.

Revision and availability: The NAC ordering link below is for version D (CHT-PLA8543D-TO257-T). CISSOID currently lists version E and Last Time Buy status (new tab). Confirm the required revision and availability with NAC.

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CHT-NEPTUNE-1210 — 1 ordering option
Web ImagesDatasheet
CHT-PLA8543D-TO257-TCHT-NEPTUNE-1210 TO-257 packageCHT-NEPTUNE-1210TO-257CHT-PLA8543DPDF

Engineering & distribution support

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