Cissiod PLUTO-B1230
CISSOID at NAC Semi · SiC Power Modules
CHT-PLUTO-B1230 Dual SiC MOSFET Module
CHT-PLUTO-B1230 is a high-temperature, 1200 V / 30 A dual silicon carbide MOSFET in a single hermetic module.
The intrinsic body diodes can be used as freewheeling diodes. A small duty cycle is recommended to limit dissipation.
CHT-PLUTO-B1230 · Dual SiC MOSFET
Typical Performance
Review the key characteristics of the CHT-PLUTO-B1230 dual SiC MOSFET family.
- Temperature range
- −55°C to +210°C
- Drain voltage
- Up to 1200 V
- Maximum drain current per switch
- 25 A DC at TC = 175°C
- On-resistance per switch
- 20 mΩ at 25°C; 60 mΩ at 210°C
- Gate-source voltage (VGS)
- −5 V to +20 V
- Package
- Hermetic HM8A module
Refer to the CHT-PLUTO-B1230 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
Review the CHT-PLA2316A-HM8A-T ordering reference below. The linked part number opens the NAC product-family search.
Manufacturer status: Last Time Buy. View CISSOID product status (new tab) and contact NAC for availability.
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CHT-PLA2316A-HM8A-T | | CHT-PLUTO-B1230 | HM8A | CHT-PLA2316A |
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Engineering & distribution support
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