As a Cissoid distributor, NAC supplies engineering & distribution support for Cissoid's high-reliability power semiconductors, silicon carbide, silicon on insulator (SOI), and signal conditioning products.
Whether the ambient temperature is low but the power dissipation heats up the chips, or in high-temperature environments, CISSOID products enable energy, weight, and cost savings in lighter, cooling-free, and more compact electronic systems. They are used in mission-critical systems as well as in applications requiring long term reliability. CISSOID supplies leaders in the Oil&Gas, Aeronautics, Industrial and Automotive markets.
CISSOID offers support to customers replacing Honeywell’s obsoleted High Temperature Microelectronics Products...Click here for more details
CISSOID is the leader in high-temperature semiconductor solutions, delivering standard products and custom solutions for power management, power conversion, and signal conditioning in extreme temperature and harsh environments. CISSOID provides high-reliability products guaranteed from -55°C to +225°C and commonly used outside that range, from cryogenic lows to upper extremes.
With a focus on the Automotive Market we deliver solutions for efficient power conversion and compact motor drives: high voltage gate drivers for SiC & GaN transistors, Power Modules featuring low inductances and enhanced thermal performance, and automotive grade components rated at 175°C in excess of the AEC-Q100 Grade 0 qualification standard. For the Aviation, Industrial & Oil & Gas Markets we provide solutions for harsh environment signal conditioning, motor control, timing and power supplies that provide reliable operation from -55°C to +225°C.
CISSOID has introduced CXT family of components designed and qualified for high-temperature automotive environments with operating junction temperature from -55°C up to +175°C (Tj), in excess of AEC-Q100 Grade 0 qualification standard: A 50mA adjustable linear voltage regulator and configurable devices enabling 13 logic functions.
Gate Driver boards optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125°C (Ta) and offering thermal headroom for the design of high density power converters in automotive and industrial applications. They enable high frequency (>100KHz) and fast SiC MOSFET's switching (dV/dt>50KV/µs), improving efficiency and reducing size and weight of the power converters.
High Temperature High Voltage Silicon Carbide (SiC) MOSFET transistor, available in standard TO-247 package and guaranteed from -55°C to +175°C (Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 60A.
CISSOID has introduced a new platform of SiC MOSFETs Intelligent Power Modules designed for automotive and industrial electrical motor drives. This new platform enables high power density converters giving access to the full benefits of SiC technology thanks to operation at high junction temperature (up to 175°C) and low switching losses.