Cissoid Transistors & Diodes - CMT-PLA9869
CISSOID at NAC Semi · Power Transistors
CMT-PLA9869 Silicon Carbide MOSFET
CMT-PLA9869 is a high-temperature, high-voltage silicon carbide (SiC) MOSFET in a standard TO-247 package. It supports operation from −55°C to +175°C junction temperature, with a breakdown voltage above 1200 V and switching currents up to 60 A.
The device includes a body diode that can be used as a freewheeling diode.
CMT-PLA9869 · SiC MOSFET
Typical Performance
Review the key characteristics of the CMT-PLA9869 SiC MOSFET family.
- Junction temperature range
- −55°C to +175°C
- Drain voltage
- Up to 1200 V
- Maximum drain current at 25°C
- 60 A DC
- On-resistance (RDS(on))
- 40 mΩ at 25°C; 75 mΩ at 175°C
- Gate-source voltage (VGS)
- −4 V to +18 V
- Package
- TO-247
Refer to the CMT-PLA9869 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
Review the CMT-PLA9869 ordering option and open the datasheet for complete specifications.
Manufacturer status: Last Time Buy. View CISSOID product status (new tab) and contact NAC for availability.
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CMT-PLA9869A-TO247 | | CMT-PLA9869 | TO-247 | CMT-PLA9869A |
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