Cissoid CXT-PLA3SA12450
CISSOID at NAC Semi · Intelligent Power Modules
CXT-PLA3SA12450 SiC Intelligent Power Module
CXT-PLA3SA12450 is a three-phase, 1200 V / 450 A SiC MOSFET Intelligent Power Module. It integrates the power switches with a gate driver based on the CISSOID HADES2® chipset.
Designed for high power density, the module combines low switching losses with power-device junction operation up to 175°C. The integrated gate driver is optimized for switching performance and robustness against dI/dt and dV/dt, with Desat, UVLO, AMC and SSD protection functions.
1200 V / 450 A
Three-phase SiC
Integrated HADES2® gate driver
CXT-PLA3SA12450 · Intelligent Power Module
Typical Performance
Review the key characteristics of the CXT-PLA3SA12450 power module family.
- Power-device junction temperature
- −40°C to +175°C
- Gate-driver ambient temperature
- −40°C to +125°C
- Drain-to-source breakdown voltage
- 1200 V
- On-resistance
- 3.25 mΩ typical
- Maximum continuous current
- 450 A at Tf = 25°C; 300 A at Tf = 90°C
Refer to the CXT-PLA3SA12450 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
Review the CXT-PLA3SA12450AA ordering reference below. The linked part number opens the NAC product-family search.
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Engineering & distribution support
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