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West Palm Beach, FL – November 8, 2021. Solitron Devices is pleased to announce the introduction of the SD11702, 650V Silicon Carbide (SiC), ultra-low RDS(on) MOSFET.
Packaged in a hermetically sealed TO-258, the SD11702 is built for the most demanding industrial, aerospace and defense applications. With operating temperatures of -55°C to 175°C, the SD11702 offers 50A of continuous drain current. With an ultra-low RDS(on) of 6.7mΩ the SD11702 provides standard gate drive characteristics allowing for the replacement of standard silicon and IGBT topologies. 200°C operation is also available upon request.
Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. The SD11702 provides ultra-low gate charge and exceptional reverse recovery characteristics making it ideal for switching inductive loads and systems that require standard gate drive.
Hermetic packaging combined with high-temperature operation make the SD11702 ideal for the most rugged power supply and motor control applications requiring small size, lightweight and high efficiency. The SD11702 is available with COTS, TX, TXV, and space level screening. Samples are available from stock
Headquartered in West Palm Beach, FL USA, Solitron Devices manufactures power semiconductors and integrated power solutions for systems that demand the ultimate in performance and reliability. Customers in aerospace, defense, industrial, and space rely on Solitron’s innovative products to develop smaller, lighter weight, higher efficiency systems-level power solutions.
Certified to MIL-PRF-19500 and MIL-PRF-38534 Solitron offers a variety of standard QPL bipolar transistors and JFETs. Solitron’s high power, multichip modules combine the latest in silicon, silicon carbide, and GaN with advanced packaging materials to achieve cutting-edge power density and performance. Capabilities include both standard and custom solutions delivered with industry-leading quality, service, and support.