Cissoid Transistors & Diodes - CMT-PLA8963
CISSOID at NAC Semi · IGBT Power Modules
CMT-PLA8963 Half-Bridge IGBT Power Module
CMT-PLA8963 is a high-temperature half-bridge IGBT power module in a standard 62 mm power package. It supports operation from −55°C to +175°C junction temperature, with a breakdown voltage above 1200 V and switching currents up to 200 A.
The module includes freewheeling diodes connected in parallel with the IGBT transistors.
CMT-PLA8963 · IGBT power module
Typical Performance
Review the key characteristics of the CMT-PLA8963 IGBT power module family.
- Junction temperature range
- −55°C to +175°C
- Collector voltage
- Up to 1200 V
- Maximum collector current
- 200 A DC at TC = 100°C
- Collector-emitter saturation voltage
- 1.85 V at 25°C / 200 A
- Package
- 62 mm half-bridge power package
Refer to the CMT-PLA8963 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CMT-PLA8963A | | CMT-PLA8963 | 62mm HB | CMT-PLA8963A |
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