Cissoid PLUTO C1220
CISSOID at NAC Semi · SiC Power Modules
CHT-PLUTO-C1220 SiC Buck or Boost Module
CHT-PLUTO-C1220 is a high-temperature, 1200 V / 20 A buck or boost module containing one silicon carbide (SiC) MOSFET and one independent SiC Schottky diode in a hermetic HM8A package.
The module supports asynchronous buck (step-down) or boost (step-up) converter designs.
CHT-PLUTO-C1220 · SiC Buck or Boost Module
Typical Performance
Review the key characteristics of the CHT-PLUTO-C1220 SiC buck or boost module.
- Junction temperature range
- −55°C to +210°C
- Drain voltage
- Up to 1200 V
- Maximum continuous MOSFET drain current
- 17 A DC at TC = 175°C
- Typical MOSFET on-resistance
- 40 mΩ at TJ = 25°C; 120 mΩ at TJ = 210°C (VGS = 20 V, ID = 25 A)
- Gate-source voltage (VGS)
- −5 V to +20 V
- Typical Schottky diode forward voltage
- 1.5 V at 20 A, TJ = 25°C
- Package
- Hermetic HM8A module with isolated case
Refer to the CHT-PLUTO-C1220 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
Review the CHT-PLA3777A-HM8A-T ordering reference below. The linked part number opens the NAC product-family search.
Manufacturer status: Last Time Buy. View CISSOID product status (new tab) and contact NAC for availability.
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CHT-PLA3777A-HM8A-T | | CHT-PLUTO-C1220 | HM8A | CHT-PLA3777A |
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Engineering & distribution support
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