Cissoid IO-1210
CISSOID at NAC Semi · SiC Schottky Diodes
CHT-IO-1210 SiC Schottky Diode
CHT-IO-1210 is a high-temperature, 1200 V / 10 A silicon carbide (SiC) Schottky diode in a hermetically sealed TO-257 metal package.
Designed for efficient power rectification, it operates over a junction-temperature range of −55°C to +210°C. The package pins are electrically isolated from the case.
CHT-IO-1210 · SiC Schottky Diode
Typical Performance
Review the key characteristics of the CHT-IO-1210 SiC Schottky diode.
- Junction temperature range
- −55°C to +210°C
- Maximum reverse voltage
- 1200 V
- Typical forward voltage
- 1.2 V at 10 A, TJ = 25°C
- Maximum continuous DC current
- 10 A at TC = 175°C
- Repetitive peak forward surge current
- 12 A
- Package
- Hermetically sealed TO-257 metal package; pins electrically isolated from the case
Refer to the CHT-IO-1210 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
Review the CHT-PLA1122A-TO257-T ordering reference below. The linked part number opens the NAC product-family search.
Manufacturer status: Last Time Buy. View CISSOID product status (new tab) and contact NAC for availability.
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CHT-PLA1122A-TO257-T | | CHT-IO-1210 | TO-257 | CHT-PLA1122A |
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