Cissoid IO-1202
CISSOID at NAC Semi · SiC Schottky Diodes
CHT-IO-1202 Dual Common-Cathode SiC Schottky Diode
CHT-IO-1202 is a high-temperature, 1200 V / 2 A dual common-cathode silicon carbide (SiC) Schottky diode in a hermetically sealed TO-257 metal package.
Designed for efficient power rectification, it operates over a junction-temperature range of −55°C to +210°C. The two diodes share a common cathode.
Package & configuration
TO-257
Hermetically sealed metal package
Dual diode · Common cathode
Typical Performance
Review the key characteristics of the CHT-IO-1202 SiC Schottky diode.
- Junction temperature range
- −55°C to +210°C
- Maximum reverse voltage
- 1200 V
- Typical forward voltage
- 1.15 V at 2 A, TJ = 25°C
- Maximum continuous DC current
- 2 A per diode at TC = 175°C
- Repetitive peak forward surge current
- 2.5 A per diode
- Package
- Hermetically sealed TO-257 metal package
Refer to the CHT-IO-1202 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
Review the CHT-PLA6609A-TO257-T ordering reference below. The linked part number opens the NAC product-family search.
Search parts, filter specifications or select a column heading to sort. Scroll sideways for additional columns. Images represent the product family.
| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CHT-PLA6609A-TO257-T | Image unavailable | CHT-IO-1202 | TO-257 | CHT-PLA6609A |
No products match these filters. Try a shorter search or reset the filters.
Engineering & distribution support
Discuss your CHT-IO-1202 design
Share your voltage, current, switching and operating-temperature requirements with NAC. Get help with part selection, specifications and availability.
Contact NAC about CHT-IO-1202