Cissoid EUROPA-A1230
CISSOID at NAC Semi · SiC Power Modules
CHT-EUROPA-A1230 Dual SiC Schottky Diode Module
CHT-EUROPA-A1230 combines two silicon carbide (SiC) Schottky diodes in a single hermetic HM8A module. Rated at 1200 V / 30 A, it supports efficient power rectification in AC-DC converters.
The module operates across a junction temperature range of −55°C to +210°C. Each diode has a typical forward voltage of 1.35 V at 30 A and TJ = 25°C.
CHT-EUROPA-A1230 · Dual SiC Schottky Diode Module
Typical Performance
Review the key characteristics of the CHT-EUROPA-A1230 dual SiC Schottky diode module.
- Junction temperature range
- −55°C to +210°C
- Breakdown voltage
- In excess of 1200 V per diode
- Typical forward voltage
- 1.35 V at 30 A, TJ = 25°C
- Maximum continuous DC current
- >30 A at TC = 175°C
- Repetitive peak forward surge current
- 50 A
- Package
- Hermetic HM8A module with isolated case
Refer to the CHT-EUROPA-A1230 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
Review the CHT-PLA1971A-HM8A-T ordering reference below. The linked part number opens the NAC product-family search.
Manufacturer status: Last Time Buy. View CISSOID product status (new tab) and contact NAC for availability.
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CHT-PLA1971A-HM8A-T | | CHT-EUROPA-A1230 | HM8A | CHT-PLA1971A |
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