Cissoid CMT-TIT8243

CISSOID at NAC Semi · SiC MOSFET Gate Drivers

CMT-TIT8243 1200 V SiC MOSFET Gate Driver

CMT-TIT8243 is a half-bridge gate-driver board optimized for 62 mm SiC MOSFET power modules. It is designed for 1200 V / 300 A SiC MOSFET modules in the 62 mm format.

Based on CISSOID's HADES chipset, the board combines isolated gate drive with undervoltage lockout, active Miller clamping, desaturation detection and soft shutdown. It supports operation from −40°C to +125°C ambient.

62 mm power modules1200 V bus max.Up to 100 kHz−40°C to +125°C
CISSOID CMT-TIT8243 half-bridge SiC MOSFET gate driver

CMT-TIT8243 · 62 mm gate-driver board

Typical Performance

Review the key characteristics of the CMT-TIT8243 half-bridge SiC MOSFET gate driver.

Target power module
62 mm SiC MOSFET module, 1200 V / 300 A
Operating ambient temperature
−40°C to +125°C
Maximum bus voltage
1200 V
Isolation test voltage
3600 VAC RMS at 50 Hz for 1 minute
Creepage / clearance
14 mm / 12 mm
Switching frequency
Up to 100 kHz, subject to gate-load and power limits
Supply voltage
12 to 18 V
Gate-drive voltages
+20 V / −5 V nominal
Control interface
RS422 PWM inputs; open-drain fault outputs
Protection
UVLO, active Miller clamping, desaturation detection, soft shutdown and gate-source short-circuit protection

Refer to the CMT-TIT8243 datasheet (PDF, opens in a new tab) for test conditions and operating limits.

Ordering Information

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CMT-TIT8243 — 1 ordering option
Web ImagesDatasheet
CMT-TIT8243ACMT-TIT8243 62 mm gate-driver boardCMT-TIT82431200 VCMT-TIT8243APDF

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