Cissoid CMT-TIT0697
CISSOID at NAC Semi · SiC MOSFET Gate Drivers
CMT-TIT0697 1200 V SiC MOSFET Gate Driver
CMT-TIT0697 is a half-bridge gate-driver board optimized for Wolfspeed XM3 SiC MOSFET power modules. The manufacturer datasheet specifies the CAB450M12XM3 1200 V / 450 A module.
Based on CISSOID's HADES chipset, the board combines isolated gate drive with undervoltage lockout, active Miller clamping, desaturation detection and soft shutdown. It supports operation from −40°C to +125°C ambient.
CMT-TIT0697 · XM3 gate-driver board
Typical Performance
Review the key characteristics of the CMT-TIT0697 half-bridge SiC MOSFET gate driver.
- Target power module
- Wolfspeed CAB450M12XM3, 1200 V / 450 A
- Operating ambient temperature
- −40°C to +125°C
- Maximum bus voltage
- 1200 V
- Isolation test voltage
- 3600 VAC RMS at 50 Hz for 1 minute
- Creepage / clearance
- 14 mm / 12 mm
- Switching frequency
- Up to 100 kHz, subject to gate-load and power limits
- Supply voltage
- 12 to 18 V
- Gate-drive voltages
- +15 V / −4 V nominal
- Control interface
- RS422 PWM inputs; open-drain fault outputs
- Protection
- UVLO, active Miller clamping, desaturation detection, soft shutdown and gate-source short-circuit protection
Refer to the CMT-TIT0697 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CMT-TIT0697A | | CMT-TIT0697 | 1200 V | CMT-TIT0697A |
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Engineering & distribution support
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