Cissoid CHT-NMOS8001
CISSOID at NAC Semi · High-Temperature Power MOSFETs
CHT-NMOS8001 80 V / 1 A N-Channel MOSFET
CHT-NMOS8001 is a medium-power, 80 V / 1 A N-channel MOSFET designed for operation from −55°C to +225°C. It is available in a compact, hermetically sealed TDFP16 ceramic surface-mount package.
At 225°C, the device supports a maximum drain current of 1 A DC or 3 A pulsed. The −5 V to +5 V gate-source range is compatible with 0 V / +5 V control.
CHT-NMOS8001 · TDFP16 package
Typical Performance
Review the key characteristics of the CHT-NMOS8001 80 V / 1 A N-channel MOSFET.
- Temperature range
- −55°C to +225°C
- Drain voltage
- Up to 80 V
- Maximum DC drain current at 225°C
- 1 A
- Maximum pulsed drain current at 225°C
- 3 A
- On-resistance
- 0.76 Ω at 25°C
1.56 Ω at 225°C - Gate-source voltage (VGS)
- −5 V to +5 V; compatible with 0 V / +5 V control
- Package options
- Hermetically sealed TDFP16 ceramic SMD; Known Good Die
Refer to the CHT-NMOS8001 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
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Manufacturer status: Last Time Buy. View CISSOID product status (new tab) and contact NAC for availability.
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| CHT-PLA4091A-TDFP16-T | | CHT-NMOS8001 | TDFP16 | CHT-PLA4091A | |
| CHT-PLA409101-D-T | No image supplied | CHT-NMOS8001 | Known Good Die | Not supplied |
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