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Cissoid CHT-HADES2S

CISSOID at NAC Semi · Gate Driver ICs

CHT-HADES2S Secondary-Side Gate Driver IC

CHT-HADES2S is a secondary-side gate driver for SiC and GaN power transistors, silicon MOSFETs and IGBTs. It can operate independently or with the CHT-HADES2P primary-side controller.

The IC combines push-pull drive with soft shutdown, undervoltage lockout, desaturation detection, overtemperature protection and an interface for active Miller clamping with an external MOSFET.

5–30 V supplyUp to 1 MHz PWM12 A peak at 125°CCeramic CQFP32

Secondary-side controller

Ceramic CQFP32

CHT-HADES2S

Push-pull gate drive
Protection functions
Isolated communication

Typical Performance

Review the key characteristics of the CHT-HADES2S secondary-side gate driver IC.

Operating junction temperature
−55°C to +225°C
Supply voltage
5 to 30 V
Peak output current
12 A at 125°C; 8 A at 225°C
Maximum PWM frequency
1 MHz
Typical propagation delay
160 ns
Typical rise / fall time
30 ns with a 1 nF load
Control interface
Isolated OOK interface or standard PWM / FAULT interface
Protection
Soft shutdown, UVLO, desaturation detection and overtemperature protection
Active Miller clamping
Requires an external MOSFET
Package
Ceramic CQFP32

Refer to the CHT-HADES2S datasheet (PDF, opens in a new tab) for test conditions and operating limits.

Ordering Information

Lifecycle: Last Time Buy. Contact NAC to confirm availability.

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CHT-HADES2S — 1 ordering option
Web ImagesDatasheet
CHT-TIT0521B-CQFP32-T—CHT-TIT0521B-CQFP32-TCeramic CQFP32CHT-TIT0521BPDF

Engineering & distribution support

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