Cissoid EVK-HADES®1210
CISSOID at NAC Semi · Evaluation Kits
EVK-HADES1210 SiC Half-Bridge Evaluation Kit
EVK-HADES1210 combines the HADES v2 isolated gate driver with two NEPTUNE 1200 V / 10 A SiC MOSFETs in a power half-bridge evaluation board. The channels support independent control or a locally generated non-overlap delay.
The reference design uses CHT-HADES2P and CHT-HADES2S ceramic ICs and an isolated power supply. The board is qualified for 175°C ambient; the IC junction rating of +225°C is a separate component limit.
HADES v2 evaluation kit
1200 V / 10 A
SiC power half-bridge
Isolated gate drive
Two NEPTUNE MOSFETs
Polyimide PCB
Typical Performance
Review the key characteristics of the EVK-HADES1210 evaluation kit.
- Power stage
- Half-bridge with two NEPTUNE SiC MOSFETs
- Maximum bus voltage
- 1200 V
- Application current
- Up to 10 A
- Board dimensions
- 68 × 54 mm
- Board ambient temperature
- Qualified for operation up to 175°C
- CISSOID active-component rating
- −55°C to +225°C junction temperature
- PCB material
- Polyimide, rated 200°C
- Short temperature excursions
- Up to 225°C for testing only, as described in the product brief
- Channel control
- Independent channels or locally generated non-overlap delay
- Design documentation
- Electrical schematic, bill of materials and Gerber files
Refer to the EVK-HADES1210 datasheet (PDF, opens in a new tab) for test conditions and operating limits.
Ordering Information
The EVK-HADES1210 ordering reference is listed below. Select a part number to search the NAC store.
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| Web Images | Datasheet | ||||
|---|---|---|---|---|---|
| EVK-TIT2785A-T | — | EVK-TIT2785A-T | HADES v2 isolated gate-driver evaluation kit | EVK-HADES1210 |
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Engineering & distribution support
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